Bipolar Transistor

Symbol	Parameter	Max test limit	Max reading
V_{(BR)CEO, CES, CER}	Collector-Emitter Breakdown Voltage	I_C = 200mA	614V
V_(BR)CBO	Collector-Base Breakdown Voltage	I_C = 200mA	614V
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_B = 50A	16V
V_CE(sat)	Collector-Emitter saturation voltage	I_B = 50A	16V
		I_C = 50A
V_BE(sat)	Base-Emitter saturation voltage	I_B = 50A	16V
		I_C = 50A
V_BE(on)	Base-Emitter threshold voltage	V_CE = 10V	16V
		I_C = 50A
I_CEO , I_CES	Collector cutoff current	V_CE = 614V	1mA
I_CBO	Collector cutoff current	V_CB = 614V	1mA
I_EBO	Emitter cutoff current	V_BE = 10V	100mA
		V_CE = 10V
h_{FE1 ,}h_FE2	DC current gain factor	V_CE = 10V	2 x 10⁵
		I_C = 50A
		I_B = 50A
h_21e	Short-circuit forward current ratio	V_CE = 10V	2 x 10⁵
		I_C = 1A