News and Articles
This area lists current press releases from Die Devices together with technical articles and white papers.
Articles for tag GaN-On-Silicon Bare Die are listed below.
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The GaN-On-Silicon Power MOSFET bare die range from Innoscience cover a broad spectrum of low & high voltage products.
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GaN-On-Silicon Bare Die
Featured Product
NTC020N120SC1
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.
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High-Speed Die Processing/Sorting
Additional capacity delivers >5000UPH throughput with 24-hour operation for volume bare die sort / pick & place.
